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Results 1 to 25 of 52

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Dislocation density control in high-purity germanium crystal growthGUOJIAN WANG; YUTONG GUAN; HAO MEI et al.Journal of crystal growth. 2014, Vol 393, pp 54-58, issn 0022-0248, 5 p.Conference Paper

3D mass diffusivity model of liquid metals in the presence of a magnetic fieldKHINE, Y. Y; BANISH, R. M.Journal of crystal growth. 2006, Vol 287, Num 2, pp 287-290, issn 0022-0248, 4 p.Conference Paper

High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substratesVELLIANITIS, G; VAN DAL, M. J. H; DURIEZ, B et al.Journal of crystal growth. 2013, Vol 383, pp 9-11, issn 0022-0248, 3 p.Article

Mn distribution behaviors and magnetic properties of GeMn films grown on Si (001) substratesOGAWA, Masaaki; XINHAI HAN; ZUOMING ZHAO et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2147-2150, issn 0022-0248, 4 p.Conference Paper

Dual-temperature encapsulation of phosphorus in germanium δ-layers toward ultra-shallow junctionsSCAPPUCCI, G; CAPELLINI, G; KLESSE, W. M et al.Journal of crystal growth. 2011, Vol 316, Num 1, pp 81-84, issn 0022-0248, 4 p.Article

Existence and shapes of menisci in detached Bridgman growthVOLZ, M. P; MAZURUK, K.Journal of crystal growth. 2011, Vol 321, Num 1, pp 29-35, issn 0022-0248, 7 p.Article

VGF growth of germanium single crystals without crucible contactLANGHEINRICH, D; PÄTZOLD, O; RAABE, L et al.Journal of crystal growth. 2010, Vol 312, Num 16-17, pp 2291-2296, issn 0022-0248, 6 p.Article

Post-deposition growth kinetics of Ge on Ge(001)TINKHAM, B. P; JENICHEN, B; KAGANER, V. M et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3416-3421, issn 0022-0248, 6 p.Article

Polycrystalline tubular nanostructures of germaniumMEI, Y. F; SIU, G. G; LI, Z. M et al.Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 59-65, issn 0022-0248, 7 p.Article

Investigation of Mn-implanted n-type GeLIFENG LIU; NUOFU CHEN; ZHIGANG YIN et al.Journal of crystal growth. 2004, Vol 265, Num 3-4, pp 466-470, issn 0022-0248, 5 p.Article

Nonlinear model-based control of the Czochralski process IV: Feedforward control and its interpretation from the crystal grower's viewNEUBERT, M; WINKLER, J.Journal of crystal growth. 2014, Vol 404, pp 210-222, issn 0022-0248, 13 p.Article

Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter schedulingNEUBERT, M; WINKLER, J.Journal of crystal growth. 2012, Vol 360, pp 3-11, issn 0022-0248, 9 p.Conference Paper

Time-dependent numerical simulation of the VGF process with a rotating magnetic fieldBELLMANN, M. P; PÄTZOLD, O; WUNDERWALD, U et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 250-252, issn 0022-0248, 3 p.Conference Paper

Change of Si(110) reconstructed structure by Ge nanocluster formationYOKOYAMA, Yuta; YAMAZAKI, Tatsuya; ASAOKA, Hidehito et al.Journal of crystal growth. 2013, Vol 378, pp 230-232, issn 0022-0248, 3 p.Conference Paper

Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulationYANPING XIAO; MOTOOKA, Teruaki; TERANISHI, Ryo et al.Journal of crystal growth. 2013, Vol 362, pp 103-105, issn 0022-0248, 3 p.Conference Paper

Surface tension and self-diffusion coefficient of liquid Si and GeLU, H. M; WANG, T. H; JIANG, Q et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 294-298, issn 0022-0248, 5 p.Article

Designing novel organogermanium OMVPE precursors for high-purity germanium filmsWOELK, Egbert; SHENAI-KHATKHATE, Deodatta V; DICARLO, Ronald L et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 684-687, issn 0022-0248, 4 p.Conference Paper

Bridgman growth of germanium crystals in a rotating magnetic fieldVOLZ, M. P; WALKER, J. S; SCHWEIZER, M et al.Journal of crystal growth. 2005, Vol 282, Num 3-4, pp 305-312, issn 0022-0248, 8 p.Article

Crystallographic investigation of homogeneous SiGe single crystals grown by the traveling liquidus-zone methodMIYATA, Hiroaki; ADACHI, Satoshi; OGATA, Yasuyuki et al.Journal of crystal growth. 2007, Vol 303, Num 2, pp 607-611, issn 0022-0248, 5 p.Article

Vertical gradient freeze of 4 inch Ge crystals in a heater-magnet moduleFRANK-ROTSCH, Ch; RUDOLPH, P.Journal of crystal growth. 2009, Vol 311, Num 8, pp 2294-2299, issn 0022-0248, 6 p.Article

MBE growth of germanium nanowires along <1 1 0>SCHMIDTBAUER, Jan; BANSEN, Roman; HEIMBURGER, Robert et al.Journal of crystal growth. 2014, Vol 406, pp 36-40, issn 0022-0248, 5 p.Article

Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈-1 -1 2〉 directionTEYS, S. A; ROMANYUK, K. N; OLSHANETSKY, B. Z et al.Journal of crystal growth. 2014, Vol 404, pp 39-43, issn 0022-0248, 5 p.Article

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processingCHEN, Robert; HUANG, Yi-Chiau; GUPTA, Suyog et al.Journal of crystal growth. 2013, Vol 365, pp 29-34, issn 0022-0248, 6 p.Article

Surfactant effects on GaAs―Ge heterostructuresKARLINA, L. B; VLASOV, A. S; BER, B. Y et al.Journal of crystal growth. 2013, Vol 380, pp 138-142, issn 0022-0248, 5 p.Article

VGF growth of 4 in. Ga-doped germanium crystals under magnetic and ultrasonic fieldsFRANK-ROTSCH, Ch; JUDA, U; UBBENJANS, B et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 16-20, issn 0022-0248, 5 p.Conference Paper

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